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BiBTeX citation export for THVIR08: High Efficient GaN/SiC Solid-State Technology for 1.3GHz Superconducting Cavity RF Power Source

  author       = {H.S. Jeong and S. Cho and H. Jung and B.G. Kang and H.J. Yoo and T.S. Yoon},
  title        = {{High Efficient GaN/SiC Solid-State Technology for 1.3GHz Superconducting Cavity RF Power Source}},
  booktitle    = {Proc. IPAC'20},
  language     = {english},
  intype       = {presented at the},
  series       = {International Particle Accelerator Conference},
  number       = {11},
  venue        = {Caen, France},
  publisher    = {JACoW Publishing, Geneva, Switzerland},
  month        = {oct},
  year         = {2020},
  note         = {presented at IPAC2020 in Caen, France, unpublished},
  abstract     = {The conventional RF power source of the accelerator, Klystron, has been used for a long time. Now, the solid-state technology is getting spotlight because of its competitive cost, easy maintenance, low/safe power supply voltage. Although LDMOS transistors are commonly known in the accelerator field, Gallium Nitride on Silicon Carbide or GaN/SiC transistor has proven its superior RF performances, higher efficiency, and smaller size in the telecom and the military field. RFHIC introduces a new GaN/SiC transistor which is specialized for 1.3GHz superconducting cavity RF power source. It maximizes its efficiency, 80%, with efficiency-contour matching techniques at 550W CW, using two 41.8mm gate-width GaN/SiC dies. The transistor is simulated with ADS, and the load-pull test verifies its performance. This transistor is utilized in designing a 2kW solid-state power amplifier with 70% efficiency. It consists of four 550W transistors with T-junction combining technology. Indeed, it contains accurate power monitoring and reflected power protection circuits. The ultimate goal of this 1.3GHz GaN/SiC solid-state technology is to replace current CW klystron up to several hundred kW.},