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TY - UNPB AU - Jeong, H.S. AU - Cho, S. AU - Jung, H. AU - Kang, B.G. AU - Yoo, H.J. AU - Yoon, T.S. ED - Schaa, Volker RW TI - High Efficient GaN/SiC Solid-State Technology for 1.3GHz Superconducting Cavity RF Power Source J2 - Proc. of IPAC2020, Caen, France, 10-15 May 2020 CY - Caen, France T2 - International Particle Accelerator Conference T3 - 11 LA - english AB - The conventional RF power source of the accelerator, Klystron, has been used for a long time. Now, the solid-state technology is getting spotlight because of its competitive cost, easy maintenance, low/safe power supply voltage. Although LDMOS transistors are commonly known in the accelerator field, Gallium Nitride on Silicon Carbide or GaN/SiC transistor has proven its superior RF performances, higher efficiency, and smaller size in the telecom and the military field. RFHIC introduces a new GaN/SiC transistor which is specialized for 1.3GHz superconducting cavity RF power source. It maximizes its efficiency, 80%, with efficiency-contour matching techniques at 550W CW, using two 41.8mm gate-width GaN/SiC dies. The transistor is simulated with ADS, and the load-pull test verifies its performance. This transistor is utilized in designing a 2kW solid-state power amplifier with 70% efficiency. It consists of four 550W transistors with T-junction combining technology. Indeed, it contains accurate power monitoring and reflected power protection circuits. The ultimate goal of this 1.3GHz GaN/SiC solid-state technology is to replace current CW klystron up to several hundred kW. PB - JACoW Publishing CP - Geneva, Switzerland ER -